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APT50GS60BR(G) APT50GS60SR(G)
600V, 50A, VCE(ON) = 2.8V Typical
Thunderbolt(R) High Speed NPT IGBT
The Thunderbolt HSTM series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt(R) series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but lower cost. An extremely tight parameter distribution combined with a positive VCE(ON) temperature coefficient make it easy to parallel Thunderbolts HSTM IGBT's. Controlled slew rates result in very good noise and oscillation immunity and low EMI. The short circuit duration rating of 10s make these IGBT's suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.
TO -2 47
D3PAK
Features
* Fast Switching with low EMI * Very Low EOFF for Maximum Efficiency * Short circuit rated * Low Gate Charge * Tight parameter distribution * Easy paralleling * RoHS Compliant
Typical Applications
APT50GS60BR(G)
APT50GS60SR(G)
* ZVS Phase Shifted and other Full Bridge * Half Bridge * High Power PFC Boost * Welding * Induction heating * High Frequency SMPS
C G E
Absolute Maximum Ratings
Symbol I C1 I C1 I CM VGE SSOA EAS tSC Parameter Continuous Collector Current TC = @ 25C Continuous Collector Current TC = @ 100C Pulsed Collector Current 1 Gate-Emitter Voltage Switching Safe Operating Area Single Pulse Avalanche Energy 2 Short Circut Withstand Time 3 Rating 93 50 195 30V 195 280 10 mJ s V A Unit
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ, TSTG TL WT Torque Parameter Total Power Dissipation TC = @ 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Mounting Torque (TO-247), 6-32 M3 Screw IGBT Min -55 Typ 0.11 0.22 5.9 Max 415 0.30 150 300 10 1.1 Unit W C/W C
8-2007 052-6301 Rev A
oz g in*lbf N*m
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol VBR(CES) VBR(ECS) Parameter
TJ = 25C unless otherwise specified
Test Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1A Reference to 25C, IC = 250A VGE = 15V IC = 50A IC = 50A TJ = 25C TJ = 125C TJ = 25C TJ = 125C Min 600 3 -
APT50GS60B_SR(G)
Typ 25 0.60 2.8 3.25 2.15 1.8 4 6.7 Max 3.15 5 50 TBD 100 mV/C A nA V Unit V V/C
Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage
VBR(CES)/TJ Breakdown Voltage Temperature Coeff
VCE(ON) VEC VGE(th)
Collector-Emitter On Voltage 4 Diode Forward Voltage 4 Gate-Emitter Threshold Voltage
VGE(th)/TJ Threshold Voltage Temp Coeff ICES IGES Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
VGE = VCE, IC = 1mA VCE = 600V, VGE = 0V TJ = 25C TJ = 125C
VGE = 20V
Dynamic Characteristics
Symbols gfs Cies Coes Cres Co(cr) Co(er) Qg Qge Ggc td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Parameter Input Capacitance Output Capacitance
TJ = 25C unless otherwise specified
Test Conditions VCE = 50V, IC = 50A
Min -
Typ 31 2635 240 145 115 85
Max -
Unit S
Forward Transconductance
Reverse Transfer Capacitance Reverse Transfer Capacitance Charge Related 5 Reverse Transfer Capacitance Current Related 6 Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-On Switching Energy
8 9 8 9 10
VGE = 0V, VCE = 25V f = 1MHz
pF
VGE = 0V VCE = 0 to 400V
VGE = 0 to 15V IC = 50A, VCE = 300V
-
235 18 100 16 33 225 37 TBD 1.2 0.755 33 33 250 23 TBD 1.7 0.950
mJ ns mJ ns nC
Inductive Switching IGBT and Diode: TJ = 25C, VCC = 400V, IC = 50A RG = 4.7 7, VGG = 15V
Inductive Switching IGBT and Diode: TJ = 125C, VCC = 400V, IC = 50A RG = 4.7 7, VGG = 15V
-
Turn-Off Switching Energy 10
052-6301
Rev A
8-2007
TYPICAL PERFORMANCE CURVES
150 125 100 75
TJ = 25C
VGE = 15V
250 225
APT50GS60B_SR(G)
T = 125C
J
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
200 175 150 125 100 75 50 25 0
V
GE
= 13 & 15V
11V 10V 9V 8V 7V 6V
50 25
TJ = 125C
TJ = 150C
0 0 1 2 3 4 5 6 VCE(ON), COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics
250s PULSE TEST<0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
125 100 75 50 25 0
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
150
6 5
IC = 100A
4 3 2 1 0
IC = 50A IC = 25A
TJ = 25C TJ = 125C
0
2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
6
FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10 8 6 4 2 0 0 50 100 150 200 GATE CHARGE (nC) FIGURE 6, Gate Charge 250 VCE = 120V VCE = 300V
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
I = 25A C T = 25C
J
IC = 100A
4
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
3
IC = 50A
2
IC = 25A
VCE = 480V
1
25 50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 5, On State Voltage vs Junction Temperature 5000
0
0
100
Cies
IC, DC COLLECTOR CURRENT(A) 1000
90 80 70 60 50 40 30 20 10 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 25
C, CAPACITANCE ( F)
P
100
Cres
10
052-6301
0 100 200 300 400 500 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 7, Capacitance vs Collector-To-Emitter Voltage
Rev A
8-2007
Coes
TYPICAL PERFORMANCE CURVES
20 18 16 14 12 10 8 6 4 VCE = 400V 2 RG = 4.7 0 0
L = 100H TJ = 25C, TJ =125C
300 td (OFF), TURN-OFF DELAY TIME (ns) 250 200 150 100 50 VCE = 400V RG = 4.7
VGE =15V,TJ=125C
APT50GS60B_SR(G)
td(ON), TURN-ON DELAY TIME (ns)
VGE = 15V
VGE =15V,TJ=25C
20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 100
RG = 4.7, L = 100H, VCE = 400V
20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 80 70
RG = 4.7, L = 100H, VCE = 400V
0
L = 100H
0
80 tr, RISE TIME (ns)
TJ = 25 or 125C,VGE = 15V
60 tf, FALL TIME (ns) 50 40 30 20 10
TJ = 25C, VGE = 15V
TJ = 125C, VGE = 15V
60
40
20
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 6000 EON2, TURN ON ENERGY LOSS (J) 5000 4000 3000 2000 1000
TJ = 25C,VGE =15V
0
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2500 EOFF, TURN OFF ENERGY LOSS (J)
= 400V V CE = +15V V GE R = 4.7
G
0
V = 400V CE V = +15V GE R = 4.7
G
2000
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
1500
1000
500
TJ = 25C, VGE = 15V
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 10 SWITCHING ENERGY LOSSES mJ)
= 400V V CE = +15V V GE T = 125C
J
0
0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6
= 400V V CE = +15V V GE R = 4.7
G
0
8
Eon2,100A
SWITCHING ENERGY LOSSES (mJ)
5 4 3 2
Eon2,100A
6
Eoff,100A
4
Eon2,50A
Eoff,100A
8-2007
2
Eoff,50A
Eon2,50A
Rev A
Eoff,25A Eon2,25A
1
Eon2,25A
Eoff,50A Eoff,25A
052-6301
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
200 100 IC, COLLECTOR CURRENT (A)
ICM
APT50GS60B_SR(G)
200 100 IC, COLLECTOR CURRENT (A)
ICM
10
VCE(on)
13s
100s 1ms 10ms
10
VCE(on)
13s
100s 1ms 10ms
1
100ms
1
DC line
TJ = 150C TC = 25C
100ms
DC line
0.1
TJ = 125C TC = 75C
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 17, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction Temperatures: IC = IC(T = 25C)*(TJ - TC)/125
C
1 10 100 800 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) Figure 18, Maximum Forward Safe Operating Area
0.35 0.30 0.25
ZJC, THERMAL IMPEDANCE (C/W)
0.9
0.7
0.20 0.15 0.10 0.05 0
0.5
Note:
PDM
0.3 0.1 0.05 10-5 10-4 SINGLE PULSE
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-1 10-2 10-3 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
160
FMAX, OPERATING FREQUENCY (kHz)
140 120 100 80 60 40 20 0 0
T = 125C J T = 75C C D = 50 % = 400V V CE R = 4.7
G
75C
TJ (C)
0.0731 Dissipated Power (Watts) 0.00606 0.260
TC (C)
0.226
ZEXT
Fmax = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
100C
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 20, Transient Thermal Impedance Model
20 30 40 50 60 70 80 90 IC, COLLECTOR CURRENT (A) Figure 21, Operating Frequency vs Collector Current 10
052-6301
Rev A
8-2007
APT50GS60B_SR(G)
APT40DQ60
Gate Voltage
10% td(on) TJ = 125C
tr
Collector Current 90%
V CC
IC
V CE
5% 10% 5% Collector Voltage
A D.U.T.
Switching Energy
Figure 22, Inductive Switching Test Circuit
Figure 23, Turn-on Switching Waveforms and Definitions
Gate Voltage 90%
TJ = 125C
td(off) 90% tf 10%
Collector Voltage
Collector Current
0
Switching Energy
Figure 24, Turn-off Switching Waveforms and Definitions
FOOT NOTE: 1 2 3 4 5 6 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. Starting at TJ = 25C, L = 224H, RG = 25, IC = 50A Short circuit time: VGE = 15V, VCC 600V, TJ 150C Pulse test: Pulse width < 380s, duty cycle < 2% Co(cr) is defined as a fixed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES. Co(er) is defined as a fixed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
Rev A
VCE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10. 7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452). 8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode. 9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy. 10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6301
8-2007
APT50GS60B_SRDQ2(G)
TO-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640)
e1 SAC: Tin, Silver, Copper
Collector (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062)
D3 Pak Package Outline
15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
1.04 (.041) 1.15(.045)
5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
Gate Collector Emitter
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Collector) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6301
Dimensions in Millimeters and (Inches)
Emitter Collector Gate Dimensions in Millimeters (Inches)
Rev A
8-2007
19.81 (.780) 20.32 (.800)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)

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